TW015Z120C,S1F Single FETs, MOSFETs_XILINX GO_Relay_Integrated Circuit IC_Connector_ Transformer_ Transisto_ Xilinx

TW015Z120C,S1F

Product classification

Single FETs, MOSFETs

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Type

G3 1200V SIC-MOSFET TO-247-4L 1

Encapsulation

Package

Tube

RoHS

YES

Price

$61.3300

Available options

Quantity

Stock : 0

Not satisfied with the price? Please fill in the information and send an RFQ quickly below, and we will respond immediately.

Specifications

PDF(1)

TYPE	DESCRIPTION
Mfr	Toshiba Electronic Devices and Storage Corporation
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-4
Mounting Type	Through Hole
Operating Temperature	175°C
Technology	SiC (Silicon Carbide Junction Transistor)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Rds On (Max) @ Id, Vgs	21mOhm @ 50A, 18V
Power Dissipation (Max)	431W (Tc)
Vgs(th) (Max) @ Id	5V @ 11.7mA
Supplier Device Package	TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On)	18V
Vgs (Max)	+25V, -10V
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 800 V