RN4990(TE85L,F)
  • image of Bipolar Transistor Arrays, Pre-Biased> RN4990(TE85L,F)
RN4990(TE85L,F)
Product_Category
Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Type
NPN + PNP BRT Q1BSR=4.7KOHM Q1BE
Encapsulation
Packages
Tape & Reel (TR)
RoHS
NO
Price
$0.0600
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Specifications
PDF(1)
TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Frequency - Transition250MHz, 200MHz
Resistor - Base (R1)4.7kOhms
Supplier Device PackageUS6
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